| 摘要 |
PURPOSE: To make it possible to perform processing at ordinary temperature and further minimize damage to processing equipment, by introducing into its processing chamber a cleaning gas containing at least nitrogen trichloride. CONSTITUTION: A processing gas for film formation, such as a gas mixture of titanium(Ti) or titanium nitride(TiN) and fluoride gas, is introduced from a processing gas source 8 into a shower head 6 through a flow controller (MFC) 10. MFC 10 is also connected to cleaning gas sources 9a, 9b, 9c, 9d. In dry cleaning, the setting of a valve V is switched to introduce a required cleaning gas into a processing chamber 2. The cleaning gases include nitrogen trichloride (NCl3 ) 9a, nitrogen (N2 ) 9b, inert gas 9c, and isopropyl alcohol(IPA) 9d. |
