Verfahren zur Herstellung einer Halbleitereinrichtung,申请号DE19914140180-传众专利搜索

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发明名称	Verfahren zur Herstellung einer Halbleitereinrichtung
摘要
申请公布号	DE4140180(C2)	申请公布日期	1996.05.02
申请号	DE19914140180	申请日期	1991.12.05
申请人	MITSUBISHI DENKI K.K., TOKIO/TOKYO, JP	发明人	II, YORIKO, ITAMI, HYOGO, JP;MATSUURA, MASAZUMI, ITAMI, HYOGO, JP
分类号	H01L21/28;H01L21/3105;H01L21/768;H01L23/522;(IPC1-7):H01L23/522;H01L21/314	主分类号	H01L21/28
代理机构		代理人
主权项
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