| 摘要 |
PURPOSE: To obtain a method for producing a stacked capacitor type DRAM subjected to finer patterning. CONSTITUTION: A capacitor insulation layer 15 is made thick by employing a high permittivity material, i.e., BST=(Ba, Sr)TiO3 . Consequently, the capacitor insulation layer 15 is left when an opening 18 is made by etching. A silicon oxide is then deposited on the entire surface and etched back to leave a framed oxide 19a. The capacitor insulation layer 15 and an interlayer insulation film 6 are then etched using the framed oxide 19a as a mask thus making a contact hole having diameter smaller than that determined by a resist pattern. |
