发明名称 |
MOSFET device structure three spaced-apart deep boron implanted channel regions aligned with gate electrode of NMOSFET device |
摘要 |
This invention describes a device structure and a method of forming the device structure using a polysilicon spacer formed on the edges of the gate electrode forming a gate structure with a cavity. The channel area is self aligned through this cavity. A fully overlapped Lightly-Doped-Drain structure is used to improve device characteristics for submicron devices. A deep boron implant region, self aligned through the gate structure, is used to improve punch through voltage.
|
申请公布号 |
US5512770(A) |
申请公布日期 |
1996.04.30 |
申请号 |
US19950427213 |
申请日期 |
1995.04.24 |
申请人 |
UNITED MICROELECTRONICS CORPORATION |
发明人 |
HONG, GARY |
分类号 |
H01L21/336;H01L21/8234;H01L29/10;H01L29/78;(IPC1-7):H01L29/167;H01L29/207;H01L29/227;H01L31/028 |
主分类号 |
H01L21/336 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|