| 摘要 |
PURPOSE: To provide the title manufacturing method in which a spatial element is completely isolated, and P-type and N-type layers can be formed simultaneously using a doping source only. CONSTITUTION: A non-flat substrate 1, on which two types of orientations are displayed, is used as a substrate where an HgCdTe layer is formed. A GaAs substrate 1 is formed. A P-type HgCdTe layer 3 is formed on the surface where the (100) direction on a buffer layer 2 is shown by an arrow, and an N-type HgCdTe layer 4 is formed on the surface of the <111>B direction shown by an arrow. A surface protective film 5 and a P-type electrode 6 are formed. The uptake quantity of extrinsic impurities and an electric activation factor differ when orientation differs as above-mentioned. A P-type and an N-type can be formed simultanously by doping one kind of impurities, if a non-flat substrate, on which the orientation having a larger difference doping efficiency are appearing, is used. |
