| 摘要 |
PURPOSE: To obtain a positive resist material sensitive to high energy beams such as far UV, electron beams or X-rays as a positive resist, excellent in sensitivity, resolution and plasma etching resistance, giving a resist pattern excellent in heat resistance, not causing PED or trailing phenomenon as the cause of the T-top shape of a pattern, excellent in dimensional precision and having high resolution fit for fine working technique. CONSTITUTION: A salt of pyridine or its deriv. represented by the formula is added to a chemically amplified positive resist material contg. an org. solvent, an alkali-soluble resin and an acid generating agent or further contg. a dissolution inhibits In the formula, R is H, alkyl, alkoxy, amino or dialkylamino and Y is alkylsulfonic acid, arylsulfonic acid or halogen. |
