| 摘要 |
PURPOSE: To stabilize the operation of an optical function element at room temp. by holding an optical function development layer between a pair of electrodes, impressing electric field thereto and further subjecting this layer to photoirradiation. CONSTITUTION: A glass substrate coated with ITO is used as a substrate 4 and ITO is subjected to an etching treatment by using a ferric chloride soln. and is worked to a stripe form to be the lower electrode 3. The substrate 4 and the lower electrode 3 are provided thereon with thin films consisting of multiple layers of thin-film monomolecular films under specific manufacturing conditions to form the optical function development layer 2. Further, the optical function development layer 2 is provided thereon with the upper electrode 1 made of striped Al orthogonally crossing the striped lower electrode 3. A conductive paste 5 is applied to the upper electrode 1 and the lower electrode 3. These electrodes are connected to a lower source 7 via conductors 6. As a result, the energy level in the optical function development layer 2 is changed by impressing an electric field on the optical function development layer 2 held by the upper electrode 1 and the lower electrode 3, thereby, the state after the photoirradiation is stabilized at room temp. and the memory effect at room temp. is obtd. |
