Halbleiterbeschleunigungssensor und Prüfverfahren für diesen

摘要

A semiconductor acceleration sensor has a silicon detecting body 10 comprising a weight 12, a supporting frame 16, and a beam structure 11 coupling the weight 12 with the supporting frame, the parts being integrally processed from a silicon wafer. At leapt one semiconductor strain gauge 13 is formed on an upper surface of the beam structure 11. A glass substrate 20 is electrostatically bonded (anode bonded) to the supporting frame 16 of the silicon detecting body with a gap 17 provided between an upper surface of the glass substrate 20 and a lower surface of the weight 12. An electrode 21 on the substrate is used to apply an electrostatic force to the weight for calibration of the sensor. <IMAGE>