Verfahren für die Überwachung von Fehlanpassungsversetzungen

摘要

A method of controlling misfit dislocation in the production of an epitaxial semiconductor wafer comprising a semiconductor substrate (1a) and, deposited thereon, an epitaxial layer (1b) having an impurity concentration differing from that of the semiconductor substrate (1a), characterised by controlling strain applied on the back surface of the semiconductor substrate (1a), prior to depositing the epitaxial layer (1b), and thereby controlling misfit dislocation in the near and interface between the semiconductor substrate (1a) and the epitaxial layer (1b). Strain may be applied by sand-blasting.