Semiconductor device using a polysilicium thin film and production thereof

摘要

A semiconductor device containing a polycrystalline silicon thin film wherein crystal grains of the silicon thin film have mainly a columnar structure and a crystal orientation of individual crystal grains is almost in a uniform direction can be produced by depositing a non-impurity-doped silicon thin film (3) or an impurity layer on an interface (30) of an underlying film (2), followed by deposition of impurity-doped silicon thin film (4), if necessary, followed by heat treatment for polycrystallization.