| 发明名称 |
Trench gate type insulated gate bipolar transistor |
| 摘要 |
A semiconductor device including a layer formed without being affected by a stepped ground pattern and a method of fabricating the semiconductor device are disclosed. Cap portions (30) (insulating layers) formed over trenches (13) and covering doped polysilicon (5) have an inclined surface (26) which satisfies Y/X </=5 where X is the length of the inclined surface (26) in a direction of the surface of a body (50) and Y is the height of the inclined surface (26) from the surface of the body (50). Formation of the insulating layers having the smooth inclined surface satisfying Y/X</=5 permits a first main electrode to be formed non-defectively without being affected by the ground pattern including the insulating layers.
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| 申请公布号 |
US5508534(A) |
申请公布日期 |
1996.04.16 |
| 申请号 |
US19950384734 |
申请日期 |
1995.02.07 |
| 申请人 |
MITSUBISHI DENKI KABUSHIKI KAISHA |
发明人 |
NAKAMURA, KATSUMI;MINATO, TADAHARU;TOMINGA, SHUUICHI;SHIOZAWA, KATSUOMI |
| 分类号 |
H01L21/331;H01L21/336;H01L29/417;H01L29/739;H01L29/745;H01L29/749;H01L29/78;(IPC1-7):H01L27/02 |
主分类号 |
H01L21/331 |
| 代理机构 |
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