| 摘要 |
<p>PURPOSE: To provide a polishing method of an intermediate wafer layer which is capable of a sheet system treatment, and excellent in workability, and can polish an insulating film on the surface of a wafer, with high precision. CONSTITUTION: A polishing equipment consists of the following: a polishing wheel 8 in which a plurality of whetstone segments 6' formed by a electrophoresis method are arranged, a spindle unit 10 rotating and retaining the polishing wheel 8, and a chuck table 12 which is arranged facing the spindle unit 10, and sucks, retains and rotates a wafer. The wafer covered with an insulating film is sucked and retained by the chuck table 12. While the chuck table 12 is rotated, the polishing wheel 8 rotated by the spindle unit 10 is made to act on the surface of wafer. Thereby the surface of the insulating film is polished and flattened.</p> |
