| 摘要 |
PURPOSE:To constitute a temperature detection circuit of an IC by composing the resistance to detect temperature of the diffusion resistance, polysilicon resistance and the ''ON'' resistance of a field effect transistor. CONSTITUTION:The first polysilicon resistance 6 has a negative temperature characteristic while the diffusion resistance has a positive temperature characteristic. Accordingly the voltage variation to the temperature at a node N3 thereof is the sum of the temperature variation of the resistance 6 and the resistance 7. Further for the resistance 3 for temperature detection regulation a substance having a negligible temperature gradient against a slope of the positive temperature characteristic or the temperature characteristic of the resistance value of the second polysilicon resistance 8 is usd. And the nodes N2 and N3 of said resistance are put in a differential amplifier 5 to invert an output OUT separated by the detection temperature. The resistance 6, 7 and 8 as well as the differential amplifier 5 consist of IC circuits. |
