发明名称 |
Semiconductor device including a lateral-type transistor |
摘要 |
A semiconductor device has a transistor made of a semiconductor which has a source and drain regions, a channel region, a gate insulative film, and a gate electrode. The gate electrode is connected to a part of the channel region. The channel region has the same conductivity type as that of the source and drain regions and has an impurity concentration lower than that of the source and drain regions.
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申请公布号 |
US5508550(A) |
申请公布日期 |
1996.04.16 |
申请号 |
US19940345337 |
申请日期 |
1994.11.21 |
申请人 |
CANON KABUSHIKI KAISHA |
发明人 |
MORISHITA, MASAKAZU;SUGAWA, SHIGETOSHI;KOIZUMI, TORU |
分类号 |
H01L21/331;H01L21/8249;H01L27/06;H01L27/07;H01L29/10;H01L29/73;H01L29/739;H01L29/78;H01L29/786;(IPC1-7):H01L29/76;H01L29/94;H01L31/062;H01L31/113 |
主分类号 |
H01L21/331 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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