发明名称 |
Porous silicon trench and capacitor structures |
摘要 |
The invention provides a capacitor structure utilizing porous silicon as a first plate of the capacitor structure, thereby greatly increasing the surface area available for the capacitor and thereby the capacitance attainable. The invention also provides a trench structure having a porous silicon region surrounding the sidewalks thereof. Such a trench can then be utilized to totem a capacitor according to the subject invention. Methods of producing the capacitor and trench structures according to the subject invention are also provided. Porous silicon is produced utilizing electrolytic anodic etching.
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申请公布号 |
US5508542(A) |
申请公布日期 |
1996.04.16 |
申请号 |
US19940330652 |
申请日期 |
1994.10.28 |
申请人 |
INTERNATIONAL BUSINESS MACHINES CORPORATION |
发明人 |
GEISS, PETER J.;KENNEY, DONALD M. |
分类号 |
H01L27/04;H01L21/02;H01L21/334;H01L21/822;H01L21/8242;H01L27/108;H01L29/94;(IPC1-7):H01L27/108;H01L29/76 |
主分类号 |
H01L27/04 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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