| 摘要 |
PURPOSE: To provide a manufacturing method of a semiconductor device wherein wiring can be formed as a thin film, the warp of a wafer can be reduced, and the formation of fine wiring can be realized with high yield. CONSTITUTION: After an interlayer insulating film 103 is formed on a P-type semiconductor substrate 101 on which various kinds of elements are formed, a contact hole 104 for electric connection with an N-type diffusion layer 102 is formed. After a titanium nitride film 105 as a barrier layer is deposited by a sputtering method, a tungsten film 106 is deposited by a CVD method. Since the CVD film of W contains considerable tensile stress, W ions are implanted in order to reduce the stress. As the result, the warp of a 6-inch wafer is reduced from about 120μm to about 40μm. After the W film 106 and the TiN film 105 are patterned, and a W wiring 108 is formed by etching, a semiconductor chip is completed by a conventional technique. Since the warp of a wafer in the course of patterning of the W wiring is relieved, flatness of the wafer is ensured, and a low resistance wiring can be obtained.
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