| 摘要 |
PURPOSE: To provide a rectifying circuit with a minimum of leak current where no parasitic bipolar transistor is forward biased. CONSTITUTION: When a node n1 provides potential higher than a node n2, a P-type field-effect transistor PI is turned in an OFF state while a P-type field- effect transistor is turned in an ON state so that the potential of the node n1 may be conveyed to a node n3 by way of the field-effect transistor P2. On the contrary, when the node n2 is in a higher potential than the node n1, the P-type field-effect (transistor P1 is turned in an ON state while the P-type field-effect transistor P2 is turned in an OFF state so that the potential of the node n2 may be conveyed to the node n3 by way of the P-type field-effect transistor P1 where the potential of an N-type well 10 is turned to be higher, thereby preventing a parasitic transistor from being forward-biased. |
