| 摘要 |
<p>PURPOSE: To provide an epitaxial crystal growth device by which crystal growth can be performed in a plurality of growth modes with one growth device. CONSTITUTION: By opening the gate valve 17 arranged between a preliminary vacuum chamber 14 and a growth chamber 3, the preliminary vacuum chamber 14 comes to communicate with the growth chamber 3, and the gas inside the growth chamber 3 is sucked out, and the pressure within the growth chamber 3 drops suddenly, and it shifts speedily from low vacuum condition to high vacuum condition.</p> |
