Process for dry-etching a semiconductor substrate

摘要

A thick (10 to 60 micron) photo-lacquer layer is applied to a semiconductor wafer (1) and formed, by photo-lithography, into cylinder-form). This is heated so that the lacquer cylinder melts to form a spherical dome lens structure which is further hardened. Using a plasma the semiconductor wafer and the photo-lacquer lens structure are etched away at precisely the same rate so an identically shaped profile is formed in the surface of the semiconductor. An anti-reflective, compensating layer (3), metal layer (4) and solder-fixing contacts (5) are then added.