| 摘要 |
FIELD: techniques of melt growth of profiled crystals with variable shape of cross-section. SUBSTANCE: seeding is accomplished on a seed platelet around the entire edges of edge defined film grower with formation of a hollow closed volume, and withdrawn from the melt column on the end face of the film grower dipped in crucible and growth chamber. The film grower is furnished with an unscaling non-capillary orifice, which in the stage of growth of single crystal is positioned below the melt level. At a transfer to the hollow profile the tubular space of the film grower gets communicated through the above orifice to the crucible below the unsealing orifice, and at a transfer from the hollow profile to a single one communication between the space of the film grower and growth chamber is interrupted by raising the melt level to the full dipping of the unsealing orifice into melt. EFFECT: enhanced efficiency of growth of profiled crystals. |
