MAGNETRON SPUTTERING DEVICE

摘要

PURPOSE: To improve the uniformity of the thickness of ITO thin films formed by a magnetron sputtering device and the film characteristics thereof by utilizing an RF system under specific conditions in the formation of these films, etc. CONSTITUTION: This magnetron sputtering device is constituted to form plasma 50 by making combination use of a magnet assembly 22 and to form transparent conductive films on a substrate 23 by utilizing this plasma 50. The sputtering device described above has a target 21 having a high packing density and a high-frequency power source 41 for supplying the main part of electric power for discharge for the purpose of forming the plasma to this target. The partial pressure of the gaseous impurities at the time of film formation is <=3×10<-6> Torr. The packing density of the target is preferably >=70% and the intensity of the max. magnetic field in a parallel direction on the target surface by a magnet device is preferably <=500G.