Semiconductor integrated circuit device with self-aligned superhigh speed bipolar transistor

摘要

A superhigh speed vertical transistor having an ultra thin base, a vertical NPN transistor having a reverse direction structure for composing an IIL, and a lateral PNP transistor similarly composing an injector of an IIL are integrated on a P-type silicon substrate. The emitter leading-out part opening of the superhigh speed vertical NPN transistor and the collector leading-out part opening of the vertical NPN transistor having a reverse direction structure are self-aligned to the base leading-out electrode. Since both the superhigh speed vertical NPN transistor having a reverse direction structure and the superhigh speed vertical NPN transistor are self-aligned, the superhigh speed vertical NPN transistor and the IIL device may be integrated on the same chip. In addition, the intrinsic base layer of the vertical NPN transistor having a reverse direction structure is deeper in junction than the base layer of the polysilicon emitter electrode for the superhigh speed NPN transistor of self-aligned type.