| 摘要 |
PURPOSE: To provide an ashing method by which an organic matter, especially, a resist film having a hardened surface by doping, etc., on a substrate is removed. CONSTITUTION: The resist film 12 having a hardened surface layer 13 of an object 8 to be ashed provided with the resist film 12 which is doped with boron implanted into the film 12 by ion shower doping is removed by performing reactive etching under a high pressure in an oxygen gas atmosphere after removing the surface layer 13 by performing reactive ion etching in the atmosphere of a mixed gas of oxygen gas and nitrogen gas. |
