| 摘要 |
PROBLEM TO BE SOLVED: To reduce the condensation of the vaporized components of liquid precursor sources and succeeding liquid precursor sources having a low vapor pressure or the boiling of a liquid reaction source in a delivery system by a method, wherein each liquid precursor source, then each succeeding liquid precursor source having the low vapor pressure are introduced into a manifold in a form such that they are vaporized at a point closer to a treating liquid than the previously vaporized liquid precursor sources. SOLUTION: A point 32, where a liquid source 50 having a vapor pressure of 400 Torrs at 50 deg.C, of a boron dopant is introduced in a manifold 30 as a vapor, is located on the side of the stream lower than an entrance point 31 of a carrier gas. A point 34, where a liquid precursor source 60 having a vapor pressure of 70 Torr at 50 deg.C of a phosphorus dopant flows in the manifold 30 as vapor, is located on the side of the stream lower than the entrance point 32 of a boron dopant vapor. A point 36, where a liquid source 70 having a vapor pressure of 9 Torr at 50 deg.C of silicon flows in the manifold 30 as a vapor, is located on the side of the stream lower than the entrance points 31, 32 and 34. As a result, the condensation of the vaporized component of the liquid precursor source or the premature boiling or the decomposition of a liquid reaction source in the manifold can be reduced. |
