MANUFACTURE OF SEMICONDUCTOR ELECTRODE

摘要

PURPOSE: To provide satisfactory adhesion strength between a CdS film and a metallic film by reducing a CdS surface chemically and by forming a metallic member thereon thereafter. CONSTITUTION: A CdS film 2 is formed on a glass substrate 1 as a CdS substrate used for joining a metallic member. Before a Cd film 4 is formed on the CdS film 2, the CdS film 2 is immersed in hydrazine solution in advance and a surface of the CdS film 2 is chemically reduced and a surface layer 3 is formed. Thereafter, it is cleaned in deoxidation ion exchange water and the one which is further cleaned by acetone is dried in inert atmosphere. The Cd film 4 is formed in a substrate obtained in this way by a resistance heating vacuum vapor deposition device and a CdS semiconductor electrode is prepared. Thereby, a CdS semiconductor electrode with enough adhesion strength can be produced between a semiconductor material and a metallic material.