| 摘要 |
PURPOSE: To obtain the structure of a fuse whereby any continuity caused by the current leakage generated after its breakage is prevented, by providing extensively the reverse-conduction type region in the whole under region of a fuse breakage opening which is extended from a junction traversing the just under part of the nearly central part of the breakage part of a fuse pattern to the one-end side of the fuse pattern. CONSTITUTION: In a fuse to be provided in a semiconductor device, a fuse pattern 3 is provided on an one-conduction type semiconductor substrate 1 via a lower insulation film 2. In the region of the surface of the one-conduction type semiconductor substrate 1 which is present under both the fuse pattern 3 and a fuse breakage opening 5, a reverse-conduction type region 6 to the conduction type of the substrate 1 is provided. This reverse-conduction type region 6 has a junction 7 which traverses the just under part of the nearly central part of a breakage part 3M of the fuse pattern 3, and the region 6 is present extensively in the whole under region of the fuse breakage opening 5 which is extended from the junction 7 to the one-end-part side of the fuse pattern 3, e.g. the side of one part 3C1 of wiring connecting parts. Thereby, the fuse is broken surely without any leak current generated after its breakage. |
