Verfahren zur Bildung von Kontaktlöchern in einem Halbleiterelement

摘要

A method for forming a contact hole in a semiconductor device comprises depositing a planarised first insulating film 3 on a substrate 1 depositing second and third insulating films (4, 5, Fig. 1) over the first film and forming a first mask (6) on a portion of the third insulating film corresponding to a region where a contact hole is to be formed. Portions of the third and second insulating films not covered by the mask are then etched and the first contact mask is removed. A ring shaped pad 7' is formed and a fourth insulating film 8 is then formed over the resulting structure. A second mask 9 is formed on the fourth insulating film except for a portion thereof corresponding to the contact hole region, which portion is etched. Then, using the ring-shaped pad as an etch barrier, a contact hole 20 is etched.