| 摘要 |
<p>PURPOSE:To reduce the number of masks by one and to improve yield by adopting reactive ion etching which uses a reactive gas including gas to which carbon fluoride or a part of fluorine of carbon fluoride is substituted with hydrogen. CONSTITUTION:In case of formation of an aperture part 4, a first transparent conductive layer 1 is partially exposed by reactive ion etching. After it is immersed in the etching liquid of amorphous silicon, a resist is removed to form a satisfactory contact without generating overhang. After second metal layers 5 and 6 are formed with Al, a resist pattern 12B (namely, the second metal layers 5 and 6) and a semiconductor protective layer 10 are used as the mask to selectively remove an amorphous silicon layer 3A by the etching liquid. Thus, the number of masks is reduced by one to simplify the production process and a thin film transistor array which has a high yield and a low production cost is produced.</p> |
