| 摘要 |
PURPOSE: To reduce the contact resistance of wiring and relieve the level difference at the opening of a connecting hole through a simple process. CONSTITUTION: After forming a connecting hole 18A in an insulating film 18 of BPSG, etc., covering a P<+> -type area 16A to be connected, the surfaces of the area 16A and film 18 are doped with boron by one time of ion implantation. The dosing amount of boron in the area 16A is controlled to about 8.7×10<15> to 8.7×10<16> cm<-2> and the impurity concentration in the film 18 from the surface to a depth of 100nm is controlled to 10<21> to 10<22> cm<-3> . Then a low-resistance area 16a is formed by activating the implanted boron in the area 16A by heat treatment and, at the same time, the level difference at the opening of the hole 18A is relieved by making the surface layer section of the film 18 to reflow. Thereafter, a wiring layer connected to the layer 16a is formed by coating the film 18 with a wiring material and patterning the material.
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