发明名称 MANUFACTURING PROCESS OF SEMICONDUCTOR CONTACT DEVICE
摘要 forming an interlayer insulating film(4) on a first conducting line(30), forming a contact mask(5) after depositing photosensitive film and exposing the first conducting line(30) by forming a contact hole on an interlayer insulation film(4) using a contact mask(5); forming a connection part(45) by etching the exposed first conduction line(30) with constant depth after the first step; a forming a second conducting ling(6) on the connection part(45) and the contact hole of the interlayer insulation film (4) after the second step.
申请公布号 KR960004077(B1) 申请公布日期 1996.03.26
申请号 KR19920024506 申请日期 1992.12.16
申请人 HYUNDAI ELECTRONICS IND. CO., LTD. 发明人 KIM, JAE - KAP
分类号 H01L21/28;(IPC1-7):H01L21/28 主分类号 H01L21/28
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