CONTACT HOLE FORMING METHOD OF SELF ALIGNED SILICID

摘要

forming the N-region and N+ region of source and drain; depositing ionized metal oxide layer on the oxide layer as the spacer; depositing a first and second isolating oxide layers; depositing polysilicon and nitrogen on the top of the oxide layer and etching back for leaving a necessary part; forming the oxide layer by oxidating the polysilicon region which is not covered by nitride layer; etching oxide layer and forming the first isolating oxide layer in the groove, and forming a metal conductor after etching nitrogen and polysilicon.