| 摘要 |
The bump of a semiconductor device is formed by (a) forming a first photo-resist layer(11) on the surface of the semiconductor device(3), and opening a bond pad(1) of the device(3), (b) depositing a cathode metal on the layer(11) to form a seed metal layer(4), (c) forming a second photo-resist layer(12) on the layer(4), and opening a bump-forming area(12a), (d) depositing a bump metal on the area(12a) by the electroplating method to form a bump(13), and (e) removing the layer(12), and heating and cooling the device(3) to remove and separate the seed metal layer(4) and the first photo-resist layer(11). |
