| 摘要 |
PURPOSE: To make the magnetic resistance higher than heretofore and to enhance the magnetic field sensitivity by forming a nonmagnetic layer between first and second magnetic material layers and dispersedly containing grains of a magnetic material in this nonmagnetic material layer. CONSTITUTION: A Co layer 2 of a film thickness of 15A is formed as the magnetic material layer by an RF sputtering method on a substrate 1 consisting of glass, etc. Next, A Cu layer 3 as the nonmagnetic material layer contg. the grains 4 consisting of Co is formed at a film thickness of 20Åby the RF sputtering method on this Co layer 2. A Cu target on which a Co chip is places is used as a target. Since Cu and Co are eutectic, the Co grows in a grain shape and forms the Co grains in the Cu layer 3. The Co grains are incorporated at 20wt.% therein. The magnetoeresistance effect films are formed by repeating the lamination of the Co layers 2 and the Cu layers 3 15 times in such a manner. The conduction electrons in the nonmagnetic layer are subjected to magnetically strong scattering by the presence of the grains 4 and the magnetic resistance under a weak magnetic field under which the magnetic moments are counterparalleled is made higher than heretofore. Consequently, the high MR ratio is exhibited and the magnetic field sensitivity is improved.
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