MANUFACTURING METHOD OF OHMIC CONTACT ELECTRODE

摘要

The forming method of the ohmic contact electrode is characterized by (a) forming an insulating layer i.e. oxide film or nitride film on the semiconductor material layer of the semiconductor substrate, covering a photoresist(PR) layer on the insulating layer, and removing a desirable part of the PR layer by the lithography method, (b) etching the insulating layer, forming an exposed aperture, and depositing the semiconductor material layer and a first metal layer on the surface of the PR layer, and (c) removing the PR layer to expose the insulating layer, and depositing a second metal layer on the surface of the first metal layer and the insulating layer to form an ohmic contact electrode.