MULTI-LAYER METAL LINE FOR SEMICONDUCTOR DEVICE

摘要

forming a first contact hole where a conduction layer is exposed by etching a first insulating film of predetermined part after forming a first insulation layer on top of the conduction layer; forming nitride film after forming a conductive plug on the first contact hole; forming a second contact hole where the conductive plug is exposed by etching the predetermined second insulation film and the bottom nitride film by forming the second insulation film on top of the nitride film; forming metal contact layer on top of a whole structure with a thin width and then thickly depositing tungsten film on top of that; and forming a third insulation film after etching the tungsten film until the upper part of second insulation film is exposed by etching-back the tungsten film.