| 摘要 |
PURPOSE: To restrain a hillock from being generated by a method wherein, when a compound-semiconductor thin film is to be epitaxially grown on an InP substrate, a substrate in which the defect density of the InP substrate and an angle of inclination from a criterion plane (100) satisfy a specific expression is used. CONSTITUTION: When a compound-semiconductor thin film is to be epitaxially grown on an InP substrate, a substrate in which the defect density D of the InP substrate and an angle of inclination from a criterion plane (100) satisfyΘ>=1.26×10<-3> D<1/2> is used. At this time, D is expressed by a defect density EPD (cm<-2> ), andΘis expressed by an angle ( deg.). However, the defect density of the substrate is a mean value. Since a defect (a dislocation) is irregular on the face of the substrate, it may be meaningless even when it is expressed by a high significant figure. When a significant figure is small, a first one digit for a proportionality constant is taken, and the angle of inclination is given byΘ>=1.26×10<-3> D<1/2> . Thereby, it is possible to restrain a hillock from being generated.
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