发明名称 SEMICONDUCTOR DEVICE
摘要 PURPOSE: To enhance the noise factor characteristics by substantially decreasing the pad area of a wiring film without altering the profile of the pad. CONSTITUTION: A large number of square through holes 16, for example, are made in the substantially circular pad part 13 of a gate wiring film 12 while being arranged in grid. For example, the diameter D of the pad part 13 is set at about 70μm and one side L of the through hole 16 is set at about 5μm. An Au wire 17, for example, is bonded to the pad part 13. Since the area at the pad part 13 can be decreased by an amount corresponding to the total area of the through holes 16, the pad capacity can be decreased correspondingly without altering the substantially circular profile at the pad part 13.
申请公布号 JPH0878468(A) 申请公布日期 1996.03.22
申请号 JP19940214466 申请日期 1994.09.08
申请人 HITACHI LTD;HITACHI TOBU SEMICONDUCTOR LTD 发明人 YASUDA TAKESHI;NOGUCHI YUJI
分类号 H01L29/78;H01L21/336;H01L21/60 主分类号 H01L29/78
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