发明名称 Plasma unterstützte chemische Dampfabscheidung von einem Oxidfilmstapel
摘要 A plasma enhanced chemical vapor deposition method is provided for depositing an oxide film onto a surface of a substrate (12). Deposition is achieved even onto a surface of a glass or other relatively non-receptive substrate. A sub-film (18) is deposited under plasma enhanced chemical vapor deposition conditions more strongly favoring deposition, followed by deposition of the desired oxide film (20) under second plasma enhanced chemical vapor deposition conditions less strongly favoring deposition. High quality oxide films can be achieved by deposition at second plasma enhanced chemical vapor deposition conditions only marginally favoring deposition over etching.
申请公布号 DE69208170(D1) 申请公布日期 1996.03.21
申请号 DE1992608170 申请日期 1992.06.29
申请人 FORD-WERKE AG, 50735 KOELN, DE 发明人 KRISKO, ANNETTE J., HIGHLAND, MICHIGAN 48357, US;PROSCIA, JAMES W., DEARBORN, MICHIGAN 48124, US
分类号 C03C17/34;C23C16/40;C23C16/50;C23C16/511;C23C28/00;G02F1/15;(IPC1-7):C23C16/40 主分类号 C03C17/34
代理机构 代理人
主权项
地址