| 摘要 |
PURPOSE:To reduce abnormal leakage current, by forming an LOCOS oxide film at the side surface of a groove in a slef-alignment manner by using the presence or absence of eaves at the upper edge of the groove, and isolating both sides of the channel of an MOS transistor by the LOCOS oxide film. CONSTITUTION:A part between neighboring MOS transistors is electrically isolated on both sides of a transfer gate 5 by an LOCOS oxide film 13. At the same time, the bottom surface of a capacitor region, where a groove is formed, and the side wall of the groove between neighboring capacitors are electrically isolated by the LOCOS film 13. In this way, only the side surfaces are isolated by the LOCOS, and the other part is made to remain without forming the groove. Therefore, both sides of the channel region of the MOS transistor forming the transfer gate are isolated by the LOCOS isolating film 13, which is ideal for the structure of the MOS transistor. |
