Chemical-vapour-deposition of monocrystal silicon-carbide film

摘要

The proportion of the inert gas (Ar) in the hydrogen/argon carrier gas is 30 - 40 %. The ratio of carrier gas and process gas mixt. is 1000:1 to 100000:1. The process gas is a mixt. of silane (SiH4) and a hydrocarbon gas such as methane, acetylene or propane. The process makes a chemical vapour deposition (CVD) of an alpha silicon-carbide ( alpha -SiC) monocrystal film at a process temp. of approximately 1300 deg C under a combined total pressure of carrier and process gases of 10 - 100 kiloPascals with a growth rate of 1 micron per hour.