| 摘要 |
The invention provides a vertical-to-surface transmission electro-photonic semiconductor device with a mesa structure of light reflective multiple layers in which the device includes a high resistive region for a carrier confinement. The high resistive region is formed by an ion-implantation of proton in a downward oblique direction during a rotation of a semiconductor substrate with use of a photo-resist mask whose horizontal width is larger than that of the mesa structure. The high resistive region defines a light emitting area of an active layer, an inverse circular truncated cone like definition of a top cladding region and a circular truncated cone like definition of a bottom cladding region. The oblique angle ion-implantation permits the top cladding region to be free from any exposure of the ion-implantation thereby an electrical resistance of the device is reduced.
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