| 摘要 |
An optoelectronic semiconductor device (100) with at least one laser (30) and two mutually parallel, strip-shaped active regions (31, 32), whose ends are optically coupled at one side, is a very suitable radiation source or amplifier for use in inter alia glass fibre communication, for example as a tunable radiation source. In a device (100) according to the invention, the ends of the active regions (31, 32) are coupled to a first (10) and a second (20) radiation coupler at two respective ends, the first radiation coupler (10) forming a first (1) and a second gate (2), and the second radiation coupler (20) forming a third (3) and a fourth gate (4) for the device (100), while the geometry and material properties of the radiation couplers (10, 20) and the active regions (31, 32) are so chosen that electromagnetic radiation generated, amplified, or reflected in the device (100) during operation moves diagonally through the device (100) owing to constructive interference. In such a device (100), at most one kind of radiation (S, R) will pass through a gate (1, 2, 3, 4). Preferably, the couplers (10, 20) are 3-dB couplers of the MMI (=Multi Mode Interference) type. Preferred embodiments are an optically controllable laser, an optically controllable laser amplifier, and a laser amplifier with stabilized gain. |
