| 摘要 |
PURPOSE: To crystallize a YSZ thin film at a low temperature by significantly promoting decomposition of a metal organic compound precursor. CONSTITUTION: A device is provided with a vacuum chamber 1 to house a substrate 8 placed on a susceptor 9, an infrared heating device 6 to heat the susceptor 9 and a vacuum ultraviolet ray irradiation device 4 to irradiate the substrate 8 with a vacuum ultraviolet ray simultaneously with heating. A metal organic compound precursor by performing dip coating on the substrate 8 is crystallized into a YSZ thin film at a low temperature of 330 deg.C by a vacuum ultraviolet excitation effect. |
