| 摘要 |
An upper portion of a silicon nitride layer deposited over a silicon oxide layer which in turn covers metal wirings is partially polished for forming a flat surface remaining silicon nitride layer prevents the metal wirings from a strong, corrosive cleaning solution during a cleaning stage of residual oxide particles and contaminant, and the remaining silicon nitride layer and a part of the silicon oxide layer are uniformly etched by dry etchant so as to decrease a parasitic capacitance coupled to the metal wirings.
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