| 摘要 |
PURPOSE: To provide a method for manufacturing a semiconductor light emitting device by which crystal defects and the dislocation caused by mismatching of lattice constants and a difference in a thermal expansion coefficient can be prevented and thereby the number of processes can be decreased. CONSTITUTION: A gallium nitride compound semiconductor layer which includes at least n-type layers 3, 4 and p-type layers 6, 7 and a light emitting section (active layer) 5 is deposited on a substrate 1. After that, an atmosphere is made into an N atmosphere and an ambient temperature is reduced to temperatures at which a GaAs compound semiconductor can be formed by vapor phase epitaxy and the n-type layers of the gallium nitride compound semiconductor layer can be annealed. Then, in the N atmosphere, an Mg-doped GaAs, GaP, InAs, or InP protective film 10 is formed on the surface of the gallium nitride compound semiconductor layer and at the same time, the p-type layers of the gallium nitride compound semiconductor layer are annealed and after that the protective film is removed by etching. |
