| 摘要 |
<p>PURPOSE: To obtain a semiconductor memory which can continuously perform page mode operation by which data of each page is continuously read out without causing time lag even when page switching is performed, and can realize continuous high speed read-out by these page mode operation with simple circuit constitution without increasing a chip area. CONSTITUTION: In a semiconductor memory 101, a Y decoder selector section 123 is constituted so that plural columns of addresses specified by column addresses A2-A6 of an input address are selected with plural columns of the next addresses of addresses specified by the column addresses A2-A6. Also, a sense amplifier section is constituted so that it has two sense amplifier groups 124a, 124b and page data read out from plural memory cells of an address (a) selected by input addresses A2-A19 and page data read out from plural memory cells of an address (a+1) of the next address are sensed by each sense amplifier circuit group respectively.</p> |
