| 摘要 |
PURPOSE: To provide a thermoelectric semiconductor material which exhibits an excellent figure of merit over a wide temperature range and can be stably used. CONSTITUTION: A thermoelectric semiconductor material contains Sb, and is double oxide of tolyltyl type crystalline structure. The material may contain Zn. Further as trace substituent, Li, at least one type of element selected from Na, K, Al, Ga, In, Y, La, Ge, Sn and Bi may be contained in the concentration of 0.01-30.0 atomic %. As the trace substituent, at least one type of element selected from iron group transient metal elements (Fe, Co, Ni, etc.) and rare earth elements (Sc and lanthanoid of atomic numbers of 57-71) may be contained in the concentration of 0.01-30.0 atomic %. |
