| 摘要 |
<p>PURPOSE: To obtain high-grade display by lessening the potential fluctuation in an optical control layer with which polycrystal silicon TFTs come into contact. CONSTITUTION: This active matrix display element is formed by forming a light shielding films 8, insulating films 7, channels of polycrystal silicon layers 5, gate insulating films 2 and gate electrodes 1 on a glass substrate 9 and is provided, with the polycrystal silicon TFTs 30 formed with source electrodes 3 and drain electrodes 4. The light shielding films 8 are made conductive and the potential lower than gate selection potential and higher than gate non- selection potential is applied on the light shielding film. As a result, the light shielding on the rear surface of the polycrystal silicon TFTs is attained and the leak currents occurring in the parasitic capacitance on the rear surface side of the channels are decreased.</p> |
