| 摘要 |
<p>PURPOSE: To lower the failure rate of a planar semiconductor element and a semiconductor product employing it while enhancing the quality by preventing generation of a leak current caused by soldering to the electrode part of the planar semiconductor element. CONSTITUTION: The planar semiconductor element 1 comprises different type of conductive regions 2, 3 formed on the surface of a silicon substrate, SiO2 4 deposited over the surface of the conductive regions 2, 3, and an electrode 6 formed at a part where the SiO2 is not deposited. An insulating protective layer 5 exhibiting higher solder repellency than the SiO2 is formed in place of the SiO2 or on the surface side thereof. The insulating protective layer 5 is formed of zinc glass or lead glass.</p> |
