| 摘要 |
<p>PURPOSE: To enhance S/N ratio by forming a funnel-like inclining face having a specified angle at an infrared ray incident opening being substantially elliptic thereby reducing the useless light and increasing the light ariving at an infrared detector. CONSTITUTION: Two infrared luminous fluxes 4 from a light source pass a polarizer 17 to produce P polarized lights which impinge on a silicon wafer sample 1 and a reference 6, respectively. A wafer holder 3 has two infrared ray incident openings 14 each defining a substantially elliptical hole 13, and a tunnel-like inclining face 15, 16 is formed at each opening 14. The inclination angle of the inclining face 15, 16 is set, on the side closer to the infrared light source, at 73.7 deg. or above with respect to a line normal to the plane of the wafer holder 3 holding the sample 1 and reference 6 and at 16.3 deg. or above on the side distant from the infrared light source. Consequently, the opening does not substantially impede the incident light at the time of measuring the Brewster's incident angle of P polarized light.</p> |
